|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 - 770 MHz Description The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band. Features include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E* Package H-36248-2 PTFA071701F* Package H-37248-2 Two-tone Drive-up VDD = 30 V, IDQ = 900 mA, = 765 MHz, tone spacing = 1 MHz -20 60 55 Features * * * Drain Efficiency (%) Thermally-enhanced packages, Pb-free and RoHS-compliant Broadband internal matching Typical CDMA2000 performance at 770 MHz, 30 V - Average output power = 35 W - Linear Gain = 18 dB - Efficiency = 34% - Adjacent channel power = -50 dBc Typical CW performance, 770 MHz, 30 V - Output power at P-1dB = 165 W - Efficiency = 62% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 30 V, 170 W (CW) output power Intermodulation Distortion (dBc) -25 -30 -35 -40 -45 -50 -55 -60 -65 44 46 48 50 52 54 IM3 IM5 Efficiency 50 45 40 35 30 25 * * * * IM7 20 15 Output Power, PEP (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1.0 A, POUT = 40 W average, 1 = 760, 2 = 770 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB at 0.01% CCDF Characteristic Gain Drain Efficiency Adjacent Channel Power Ratio All published data at TCASE = 25C unless otherwise indicated Symbol Gps Min -- -- -- Typ 18.5 32 -36 Max -- -- -- Unit dB % dBc D ACPR *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 0.9 A, POUT = 150 W PEP, = 765 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Symbol Gps Min 18.0 44 -- Typ 18.7 46 -29.5 Max -- -- -28 Unit dB % dBc D IMD DC Characteristics Characteristic Drain-Source Breakdown Voltage Drain Leakage Current Conditions VGS = 0 V, IDS = 10 mA VDS = 30 V, V GS = 0 V VDS = 63 V, V GS = 0 V Symbol V(BR)DSS IDSS IDSS RDS(on) VGS IGSS Min 65 -- -- -- 2.0 -- Typ -- -- -- 0.07 2.48 -- Max -- 1.0 10.0 -- 3.0 1.0 Unit V A A V A On-State Resistance Operating Gate Voltage Gate Leakage Current VGS = 10 V, V DS = 0.1 V VDS = 30 V, IDQ = 1.0 A VGS = 10 V, V DS = 0 V Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Junction Temperature Storage Temperature Range Thermal Resistance (TCASE = 70C, 170 W CW) Symbol VDSS VGS TJ TSTG RJC Value 65 -0.5 to +12 200 -40 to +150 0.38 Unit V V C C C/W Ordering Information Type and Version PTFA071701E V4 PTFA071701E V4 R250 PTFA071701F V4 PTFA071701F V4 R250 Package Type H-36248-2 H-36248-2 H-37248-2 H-37248-2 Package Description Slotted flange, single-ended Slotted flange, single-ended Earless flange, single-ended Earless flange, single-ended Shipping Tray Tape & Reel 250 pcs Tray Tape & Reel 250 pcs *See Infineon distributor for future availability. Data Sheet 2 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Power Sweep, CW Conditions VDD = 30 V, IDQ = 0.9 A, = 770 MHz 21 20 19 65 55 50 Broadband Performance VDD = 30 V, IDQ = 900 mA, POUT = 75 W 0 -5 -10 -15 Gain (dB), Efficiency (%) 45 Gain (dB) Gain 45 35 25 40 35 18 17 16 15 30 35 40 45 50 55 Return Loss 30 25 20 15 700 -20 -25 Efficiency 15 5 Gain -30 -35 790 730 760 Output Power (dBm) Frequency (MHz) CW Performance at Selected Voltages IDQ = 0.9 A, = 770 MHz 64 60 21 21 20 Power Sweep VDD = 30 V, = 770 MHz Gain 20 IDQ = 1.3 A IDQ = 1.1 A Drain Efficiency (%) Power Gain (dB) 56 52 48 44 40 V DD = 32 V V DD = 30 V V DD = 28 V 51 52 53 19 18 17 16 15 14 48 49 50 19 18 17 Gain (dB) IDQ = 0.9 A 16 15 30 35 40 45 50 55 IDQ = 0.7 A Efficiency 36 Output Power (dBm) Output Power (dBm) Data Sheet 3 of 9 Rev. 03, 2009-11-11 Input Return Loss (dB) Drain Efficiency (%) Efficiency PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Typical Performance (cont.) 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1.0 A, = 765 MHz Bias Voltage vs. Temperature Voltage normalized to typical gate voltage, series show current -25 70 60 1.03 1.556 A 3.1 A 6.22 A TCASE = 25C TCASE = 90C IM3 Normalized Bias Voltage (V) -30 -35 1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20 Drain Efficiency (%) 50 40 30 20 10 0 32 34 36 38 40 ACPR (dBc) 7.76 A 9.32 A 10.88 A 12.44 A 14 A -40 -45 ACPR Efficiency 42 44 46 48 -50 -55 -60 0 20 40 60 80 100 Output Power (dBm) Case Temperature (C) - WAVE LE NGTH S T OW A Broadband Circuit Impedance R Z0 = 50 D Z Source Z Load 0.0 0.1 G S Z Load 725 MHz 0.1 TOW ARD LOAD GT HS 770 MHz Z Source 725 736 748 759 770 2.690 2.680 2.700 2.720 2.690 -3.730 -3.470 -3.240 -3.050 -2.890 2.070 2.020 1.980 1.930 1.900 -1.27 -1.08 -0.84 -0.64 -0.46 W AV <--- MHz R jX R jX E L EN Frequency Z Source Z Load 0. 2 Data Sheet 4 of 9 Rev. 03, 2009-11-11 0.2 0 .1 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit 0.001F R2 1.3K V R1 1.2K V QQ1 LM7805 VDD Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R6 5.1K V C4 0.1F R5 2K V R7 10 V C5 10F 35V R8 5.1K V C6 4.7F C7 0.1F C8 62pF C12 62pF C13 2.2F C14 10F 50V L1 VDD C15 0.1F C16 10F 50V l4 l6 C9 62pF J1 R9 10 V DUT C22 3.3pF C24 62pF l1 l2 l3 C10 3.9pF l5 C11 6.2pF l8 l9 l10 C23 3.3pF L2 l11 l12 J2 l7 C17 62pF C18 2.2F C19 10F 50V C20 0.1F C21 10F 50V Reference circuit schematic for = 770 MHz Circuit Assembly Information DUT PTFA071701E or PTFA071701F PCB 0.76 mm [.030"] thick, r = 3.48 Microstrip l1 l2 l3 l4 l5 l6, l7 l8 l9 (taper) l10 (taper) l11 l12 Data Sheet Electrical Characteristics at 770 MHz 0.025 0.053 0.035 0.148 0.094 0.103 0.139 0.062 0.002 0.005 0.016 , 50.7 , 38.4 , 38.4 , 76.7 , 7.8 , 44.5 , 8.4 , 8.4 / 33.8 , 33.8 / 38.4 , 38.4 , 50.7 5 of 9 LDMOS Transistor Rogers RO4350 Dimensions: L x W ( mm) 5.84 x 1.65 12.32 x 2.54 8.00 x 2.54 35.94 x 0.76 20.32 x 17.78 24.13 x 2.03 29.97 x 16.51 13.46 x 16.51 / 3.05 0.51 x 3.05 / 2.54 1.27 x 2.54 3.76 x 1.65 1 oz. copper Dimensions: L x W (in.) 0.230 0.485 0.315 1.415 0.800 0.950 1.180 0.530 0.020 0.050 0.148 x 0.065 x 0.100 x 0.100 x 0.030 x 0.700 x 0.080 x 0.650 x 0.650 / 0.120 x 0.120 / 0.100 x 0.100 x 0.065 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Reference Circuit (cont.) C3 C2 C8 R6 R4 C5 R5 QQ 1 R3 C4 R9 R1 C1 L1 Q1 R2 C12 C13 C14 C15 C16 C22 C24 C7 C6 R7 R8 RF_IN C9 C10 C11 C21 C17 C18 C19 C20 L2 C23 RF_OUT a071701 ghl - v 1_cd _4- 15 - 09 Reference circuit assembly diagram* (not to scale) Component Description Suggested Manufacturer Digi-Key Digi-Key Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key 6 of 9 P/N or Comment PCC1772CT-ND PCC104BCT-ND PCS3475CT-ND 399-1655-2-ND 100B 620 100B 3R9 100B 7R5 920C 202 TPSE106K050R0400 100B 3R3 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND Rev. 03, 2009-11-11 C1, C2, C3 Capacitor, 0.001 F C4, C7, C15, C20 Capacitor, 0.1 F C6 Capacitor, 4.7 F, 16 V C5 Tantalum capacitor, 10 F, 35 V C8, C9, C12, C17, C24 Ceramic capacitor, 62 pF C10 Ceramic capacitor, 3.9 pF C11 Ceramic capacitor, 6.2 pF C13, C18 Capacitor, 2.2 F C14, C16, C19, C21 Tantalum capacitor, 10 F, 50 V C22, C23 Ceramic capacitor, 3.3 pF L1, L2 Ferrite, 8.9 mm Q1 Transistor QQ1 Voltage regulator R1 Chip resistor, 1.2k R2 Chip resistor, 1.3k R3, R5 Chip resistor, 2k R4 Potentiometer, 2k R6, R8 Chip resistor, 5.1k R7, R9 Chip resistor, 10 *Gerber files for this circuit available on request Data Sheet PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications Package H-36248-2 45 X 2.720 [45 X .107] C L D S FLANGE 9.779 LID 9.398+0.100 -0.150 [.385] .370+0.004 19.4310.510 -0.006 [.7650.020] 4.8260.510 [.1900.020] [ ] C L G 2X R1.626 [R.064] 4X R1.524 [R.060] 2X 12.700 [.500] 27.940 [1.100] SPH 1.575 [.062] 1.016 [.040] 19.8120.200 [.7800.008] 3.6320.380 0.0381 [.0015] -AC L C66065-A2322-C001-01-0027_h-36248-2_11-11-09 34.036 [1.340] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Data Sheet 7 of 9 Rev. 03, 2009-11-11 PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Package Outline Specifications (cont.) Package H-37248-2 [45 X .107] 4X R0.508+.381 -.127 R.020+0.015 -0.005 4.8260.510 [.1900.020] D [ ] FLANGE 9.779 [.385] LID 9.398+0.100 -0.150 .370+0.004 -0.006 [ ] 19.4310.510 [.7650.020] G 2X 12.700 [.500] SPH 1.575 [.062] 19.8120.200 [.7800.008] 1.016 [.040] 0.0381 [.0015] -AC L C66065-A2323-C001-01-0027_h-37248-2_11-11-09 3.6320.380 [.1430.015] S 20.574 [.810] Diagram Notes--unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances 0.127 [0.005] unless specified otherwise. 4. Pins: D = drain; S = source; G = gate. 5. Lead thickness: 0.102 +0.051/-0.025 [0.004 +0.002/-0.001]. 6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 8 of 9 Rev. 03, 2009-11-11 PTFA071701E/F V4 Confidential, Limited Internal Distribution Revision History: 2009-11-11 Previous Version: 2009-09-09, Preliminary Data Sheet Page All 2 7,8 Subjects (major changes since last revision) Data Sheet now relects released-product specifications Updated maximun ratings Updated package outline Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2009-11-11 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 9 of 9 Rev. 03, 2009-11-11 |
Price & Availability of PTFA071701E |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |